Open Access Open Access  Restricted Access Subscription or Fee Access

Electrical Characteristics and Probable Applications of High Electron Mobility Transistors for Very Large Scale Integration Circuits in Microelectronics and Nanoelectronics Industry

Subhadeep Mukhopadhyay


In our work, a maximum drain current of 556 mA is achieved by the simulated structures of double-heterojunction high electron mobility transistors (HEMTs) using the SILVACO-ATLAS physical simulator. According to the results, drain current is higher at shorter gate length. Also, drain current is higher at larger aluminium mole fraction. Further, drain current is higher at larger thickness of AlGaN barrier layer. Again, drain current is found as higher at larger doping concentration of AlGaN barrier layer. In this work, formation of 2-DEG is demonstrated directly by the study on conduction band engineering according to the quantum well at heterojunction. Effect of gate length to control the electrical characteristics of gallium nitride based double-heterojunction HEMTs in nano-scale dimensions is one particular investigation in our work. In future, HEMT may become an effective circuit component for the very large scale integration (VLSI) circuits in microelectronics and nanoelectronics industry.


Aluminium mole fraction, doping concentration, gate length, VLSI circuits, microelectronics, nanoelectronics

Full Text:



Chattopadhyay MK, Tokekar S. Thermal Model for dc Characteristics of AlGaN/GaN HEMTs Including Self-Heating Effect and Non-Linear Polarization. Microelectron J. 2008; 39(10): 1181–1188p.

Chattopadhyay MK, Tokekar S. Temperature and Polarization Dependent Polynomial Based Non-Linear Analytical Model for Gate Capacitance of AlmGa1−mN/GaN MODFET. Solid-State Electron. 2006; 50(2): 220–227p.

Korwal M, Haldar S, Gupta M, Gupta RS. Parasitic Resistance and Polarization-Dependent Polynomial-Based Non-Linear Analytical Charge-Control Model for AlGaN/GaN MODFET for Microwave Frequency Applications. Microwave Opt Technol Lett. 2003; 38(5): 371–378p.

Chattopadhyay MK, Tokekar S. Analytical Model for the Transconductance of Microwave AlmGa1−mN/GaN HEMTs Including Nonlinear Macroscopic Polarization and Parasitic MESFET Conduction. Microwave Opt Technol Lett. 2007; 49(2): 382–389p.

Mukhopadhyay S, Prajapati A, Kalita S. Report on the Nanoelectronic-Designs of the High Electron Mobility Transistors by a Certain Range of Simulation-Studies in the IMPRINT-Project of the Government-of-India. Nano Trends: A Journal of Nanotechnology and Its Applications. 2016; 18: 36–58p.

Mukhopadhyay S, Kalita S. Report on the Effects of Mole Fraction, Doping Concentration, Gate Length and Nano-Layer Thickness to Control the Device Engineering in the Nanoelectronic AlGaN/GaN HEMTs at 300K to Enhance the Reputation of the National Institute of Technology Arunachal Pradesh. Nano Trends: A Journal of Nanotechnology and Its Applications. 2017; 19: 15–47p.

Brown R. A Novel AlGaN/GaN based Enhancement Mode High Electron Mobility Transistor with Sub-Critical Barrier Thickness. PhD Thesis. University of Glasgow, United Kingdom. 2015.

Xiang-Dong L, Jin-Cheng Z, Zhen-Xing G, Hai-Qing J, Yu Z, Wei-Hang Z, Yun-Long H, Ren-Yuan J, Sheng-Lei Z, Yue H. Al0.30Ga0.70N/GaN/Al0.07Ga0.93N Double Heterostructure High Electron Mobility Transistors with a Record Saturation Drain Current of 1050 mA/mm. Chin Phys Lett. 2015; 32(11): 117202p.

Luo J, Zhao SL, Lin ZY, Zhang JC, Ma XH, Hao Y. Enhancement of Breakdown Voltage in AlGaN/GaN High Electron Mobility Transistors Using Double Buried p-Type Layers. Chin Phys Lett. 2016; 33(6): 067301p.

Juncai M, Jincheng Z, Junshuai X, Zhiyu L, Ziyang L, Xiaoyong X, Xiaohua M, Yue H. Characteristics of AlGaN/GaN/AlGaN Double Heterojunction HEMTs with an Improved Breakdown Voltage. J Semicond. 2012; 33(1): 014002p.

Charfeddine M, Belmabrouk H, Zaidi MA, Maaref H. 2-D Theoretical Model for Current-Voltage Characteristics in AlGaN/GaN HEMT's. J Mod Phys. 2012; 3(8): 881–886p.

Mukhopadhyay S. Educational Review on the Neutron Physics and Third Quantisation. Journal of Nuclear Engineering and Technology (JoNET). 2018; 8(2): 8–10p.

Mukhopadhyay S. Report on the Indian-Space-Programmes with Indian-Missile-Programmes from the 20th Century of 2nd Millennium to the 21st Century of 3rd Millennium. Research & Reviews: Journal of Space Science and Technology (RRJoSST). 2018; 7(3): 35–47p.

Mukhopadhyay S. Nature of Absolute Infinity, Spatial Limit of Our Universe, and Principle of Future Space Vehicle by Third Quantisation in Theoretical Physics. Research & Reviews: Journal of Space Science and Technology (RRJoSST). 2019; 8(3): 23–30p.

Mukhopadhyay S. Report on the Novel Electrical Characteristics of Microelectronic High Electron Mobility Transistors to Establish a Low-Cost Microelectronics Laboratory in the National Institute of Technology Arunachal Pradesh. Journal of Semiconductor Devices and Circuits (JoSDC). 2017; 4(2): 6–28p.

Sedra AS, Smith KC. Microelectronic Circuits: Theory and Applications. 6th Edn. India: Oxford University Press; 2017.

Kalita S. Studies on the Quantum Well Heterostructure for Gallium Nitride based High Electron Mobility Transistors. PhD Thesis. National Institute of Technology Arunachal Pradesh, India. 2019.

Mukhopadhyay S. Experimental Investigations on the Surface-Driven Capillary Flow of Aqueous Microparticle Suspensions in the Microfluidic Laboratory-on-a-Chip Systems. Surface Rev Lett. 2017; 24: 1750107p.

Mukhopadhyay S, Kalita S. Simulation Studies on the Drain Characteristics of Microelectronic AlGaN/GaN HEMTs Corresponding to the 30 nm of AlGaN Nano-Layer. Journal of Semiconductor Devices and Circuits (JoSDC). 2017; 4(1): 8–16p.

Kalita S, Mukhopadhyay S. Effect of Aluminium Nitride Nucleation-Layer on the Drain Characteristics of Nanoelectronic AlGaN/GaN Single-Heterojunction HEMTs. Journal of Nuclear Engineering and Technology (JoNET). 2017; 7(1): 1–3p.

Gupta JB. Basic Electronics. 3rd Edn. India: S. K. Kataria and Sons; 2017.

Chattopadhyay D, Rakshit PC. Electronics: Fundamentals and Applications. 11th Edn. India: New Age International Publishers; 2012.


  • There are currently no refbacks.

Copyright (c) 2020 Nano Trends-A Journal of Nano Technology & Its Applications