Author Details

Mukhopadhyay, Subhadeep, Department of Electronics and Communication Engineering, National Institute of Technology Arunachal Pradesh, Yupia, District-Papum Pare, Arunachal Pradesh, India

  • Vol 10, No 1 (2020) - Research Article
    Drain Characteristics of GaN based Single-Heterojunction HEMTs with Variations in Gate Length and in Thickness of AlGaN Nano-Layer
    Abstract