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Drain Characteristics of GaN based Single-Heterojunction HEMTs with Variations in Gate Length and in Thickness of AlGaN Nano-Layer

Avrajyoti Dutta, Sanjib Kalita, Subhadeep Mukhopadhyay


We have studied the drain characteristics in single-heterojunction AlGaN/GaN high electron mobility transistors (HEMTs) using the SILVACO-ATLAS software tool. The drain characteristics are studied with respect to five types of simulated structures. In each type of structures, the gate length and thickness of AlGaN nano-layer are different with respect to other types. Effects of drain voltage and gate voltage on drain current are studied by the simulated structures. Also, the effect of aluminium mole fraction on drain current is studied by the simulated structures. This work will be useful to fabricate the HEMT based sensors in future.


Drain current, drain voltage, gate voltage, mole fraction, thickness, HEMT

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