Author Details

Mukhopadhyay, Subhadeep, Department of Electronics and Communication Engineering, National Institute of Technology Arunachal Pradesh, Yupia, District-Papum Pare, Arunachal Pradesh, India

  • Vol 22, No 1 (2020) - Review Article
    Effects of Drain Voltage, Gate Voltage and Aluminium Mole Fraction on Drain Current in GaN based Single-Heterojunction HEMTs designed with AlGaN Nano-Layers
    Abstract  PDF