Variation of PbS Layer Thickness in Colloidal Quantum Dot Solar Cell
DOI:
https://doi.org/10.37591/jorachv.v6i1.617Keywords:
Colloidal quantum dot solar cell, Open circuit voltage, Short circuit current, Fill factor, Power conversion efficiency, Quantum efficiencyAbstract
The broad tuning of semiconductor band structure is proposed for colloidal quantum dot via the quantum size effect by several workers. In this paper, we define brief details on effect of the thickness of lead sulphide (PbS) layer as the absorbing photovoltaic materials in the colloidal CQD solar cell and show their effect on the performance of the solar cell. The calculated results shows that with lower thickness of 180 nm have the better efficiency compared to the higher thickness of 250 nm of PbS layer. For the higher thickness of 250 nm, QE of the CQD solar cell is 45.31% whereas for the lower thickness of 180 nm, QE of the CQD solar cell is 52.64%. The value of Voc (V), Jsc (mA/cm2), FF (%) and PCE (%) are 0.4049, 9.081176, 31.66 and 1.16 respectively for the thickness of 180 nm and for the thickness of 250 nm the value of Voc (V), Jsc (mA/cm2), FF (%) and PCE (%) are 0.4023, 7.387024, 29.29 and 0.87 respectively.
References
Ankita Sharma, Bramha P. Pandey. Variation of PbS Layer Thickness in Colloidal Quantum Dot Solar Cell. Journal of Refrigeration, Air Conditioning, Heating and Ventilation. 2019; 6(1): 1–4p.
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