Dutta, Avrajyoti, Department of Electronics and Communication Engineering, National Institute of Technology Arunachal Pradesh, Yupia, District-Papum Pare, Arunachal Pradesh, India
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Vol 22, No 1 (2020) - Review Article
Effects of Drain Voltage, Gate Voltage and Aluminium Mole Fraction on Drain Current in GaN based Single-Heterojunction HEMTs designed with AlGaN Nano-Layers
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ISSN: 0973-418X