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Impact of Barrier Thickness and Height on the Current-Voltage (I-V) Characteristics of GaAs/Ga1-xAlxAs Quantum Cascaded Laser

Manish Kumar Yadav, B. P. Pandey, Dharmendra Kumar


Quantum Cascaded Laser (QCL) physics is different from a diode laser. In diode, laser transitions occur between the conduction band and valance band of the materials whereas in quantum-cascade laser transitions occur between states within a single quantum well. This paper presents the effect of barriers thickness on the I-V characteristics of GaAs/Ga1-xAlxAs based QCL. The calculated I-V characteristics findings predict the output current modulation capability of the proposed GaAs/Ga1-xAlxAs QCL. Further, this paper presents the effect of variation in composition ‘x’ of the barrier height on I-V characteristics. In this study, GaAs/Ga1-xAlxAs QCL structures have been theoretically investigated at operating temperatures, T=10K and T=177K. The calculated results show that GaAs/Ga1-xAlxAs QCL gives a stable performance and have high tuning capability at lower temperature and less stable at a higher temperature in terms of produced output current. 


Alloy composition, i-v characteristics, resonant tunneling, transmission coefficient,

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