Investigate the origin of the Hall Effect

Abstract

The Hall Effect was first recorded by a scientist named E. H. Hall. Detailed information on how the Hall effect is produced and what needs to be done to understand it is also provided here. After a brief introduction of the Hall operating rule and the basic characteristics of Hall devices, the most recent developments in the field are reviewed. It outlines: better information about the influence of device geometry on sensor characteristics; The results of research on parasitic and second-order effects, such as piezo-hole effects, non-linear effects and Lisa effects, sensitivity of the last-affect device, new designs and technologies, adopted hole devices, and two-dimensional electron gas hole devices; And the latest electronic methods for changes in sensor characteristics, such as non-linear effects correction and offset reduction. Sometimes low temperatures and magnetic fields have a quantum effect, however, such effects are not considered here. But focusing on semiconductors instead of metals or insulators, thus the same rule generally applies. Concentration and type (negative or positive) of charge conductors in semiconductors, metals and metals with the help of Hall effect method. In general, the mobility of charge carriers is determined. The Hall voltage depends on the external magnetic field. And, in which the electron is produced by scattering rather than the free motion of the electron. Two methods are enabled for this "inconsistent" Hall Effect: squat scattering and side jump.